50 ohm-cm High-Throughput CoatingGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm High-Throughput Coating"> 50 ohm-cm High-Throughput CoatingGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm High-Throughput Coating"> 50 ohm-cm High-Throughput CoatingGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating – www.zeilnieuws.nl

New Arrivals are Here-Fast Shipping from Our USA Warehouse

Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating

$125.92

Quantity
50 ohm-cm High-Throughput Coating">
Description

Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput CoatingGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

lifetime support is provided

Do not use an air compressor when operating the unit in the glove box

NO pressing powder with particle size LESS THAN 30 micron should be used

Crystal Boundary:                     36o ( +/-0

Dicing saw

To use inside the glove box

51 g/cm3 Melting Point  894 oC  Hardness  2 Mohs Hydroscopicity little Afterglow (after 6ms)   0

Shipping Weight & Dimensions 110 lbs

LCD display with user timer settings (Continuous/timer)

4 mm  x  25

EQ-Die-15D-B is a 14

Cobalt Foam for Battery Cathode Substrate  (100  length x 100mm width x 1

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message