Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50 Max. current +1 mA

Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50 Max. current +1 mASpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z

Surface roughness:    Ra<10A

Vacuum Storage Chambers

rT 13 =      11

Max sample height: <100mm

Orientation:              <110> +/- 0

Crystal Frequency: 6 MHz with a resolution of 0

Only the rubber needle included in the package is allowed to use for adjusting the set point SP1 and SP2

MSK-117A  Edge Trimming Machine

Working Temperature 1100ºC Max

(Dia x Height) 20mm x 1

It is an ideal tool for material and chemical researchers to process air sensitive materials and solutions

Please must always wear protection goggles during operation